2SK1073 Specs and Replacement
Type Designator: 2SK1073
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.6 Ohm
Package: TO-220F
2SK1073 substitution
- MOSFET ⓘ Cross-Reference Search
2SK1073 datasheet
2sk1073.pdf
isc N-Channel MOSFET Transistor 2SK1073 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 8... See More ⇒
2sk1079.pdf
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2sk1078.pdf
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2sk1070.pdf
Preliminary Datasheet R07DS0282EJ0300 2SK1070 (Previous REJ03G0574-0200) Rev.3.00 Silicon N-Channel Junction FET Mar 28, 2011 Application Low frequency / High frequency amplifier Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 1 1. Drain 2. Source 2 3. Gate Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Gate to drain voltage ... See More ⇒
Detailed specifications: 2SK1009, 2SK1010, 2SK1011, 2SK1012, 2SK1013, 2SK1014, 2SK1023, 2SK1024, IRF520, 2SK1081, 2SK1134, 2SK1142, 2SK1143, 2SK1212, 2SK1319, 2SK1320, 2SK1324
Keywords - 2SK1073 MOSFET specs
2SK1073 cross reference
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