2SK1143 Datasheet and Replacement

isc N-Channel MOSFET Transistor 2SK1143DESCRIPTIONDrain Current I =2A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 9

isc N-Channel MOSFET Transistor 2SK1142DESCRIPTIONDrain Current I =2A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 8

2SK1189External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 60 V V 60 V I = 250A, V = 0VDSS (BR) DSS D GSV 20 V I 500 nA V = 20VGSS GSS GSI 15 A I 250 A V = 60V, V = 0VD DSS DS GSI V 2.0 4.0 V V = 10V, I = 250AD (pulse) 60 (Tch 150

2-2 MOS FETsSpecifications List by Part NumberAbsolute Maximum RatingsIGSS IDSS VTHVDSS VGSS ID ID (pulse) PDPart EASConditions Conditions ConditionsNumber(nA) VGS (A) VDS (V) VDS ID(mJ)(V) (V) (A) (A) (W)max (V) min max (V) min max (V) ( A)2SK1188 60 20 10 40 25 2.1 500 20 250 60 2.0 4.0 10 2502SK2420 60 20 30 120 40 38 100 20 100 60 2.0 4.

2SK1187External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics(Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 100 V V 100 V I = 250A, V = 0VDSS (BR) DSS D GSV 20 V I 500 nA V = 20VGSS GSS GSI 12 A I 250 A V = 100V, V = 0VD DSS DS GSI V 2.0 4.0 V V = 10V, I = 250AD (pulse) 48 (Tch 15

2-2 MOS FETsSpecifications List by Part NumberAbsolute Maximum RatingsIGSS IDSS VTHVDSS VGSS ID ID (pulse) PDPart EASConditions Conditions ConditionsNumber(nA) VGS (A) VDS (V) VDS ID(mJ)(V) (V) (A) (A) (W)max (V) min max (V) min max (V) ( A)2SK1179 500 20 8.5 34 85 400 500 20 250 500 2.0 4.0 10 2502SK1183 200 20 3 12 25 30 500 20 250 200 2.0

2SK1192External dimensions 2 ...... FM100Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 60 V V 60 V I = 250A, V = 0VDSS (BR) DSS D GSV 20 V I 500 nA V = 20VGSS GSS GSI 40 A I 250 A V = 60V, V = 0VD DSS DS GSI 160 (Tch 150C) A V 2.0 4.0 V V = 10V, I = 250AD

2SK1178External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics(Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 500 V V 500 V I = 250A, V = 0VDSS (BR) DSS D GSV 20 V I 500 nA V = 20VGSS GSS GSI 4.0 A I 250 A V = 500V, V = 0VD DSS DS GSI 16 (Tch 150C) A V 2.0 4.0 V V = 10V, I = 250AD

2SK1186External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 100 V V 100 V I = 250A, V = 0VDSS (BR) DSS D GSV 20 V I 500 nA V = 20VGSS GSS GSI 9I 250 A V = 100V, V = 0VD A DSS DS GSI V 2.0 4.0 V V = 10V, I = 250AD (pulse) 36 (Tch 150

2SK1177External dimensions 1......FM20Absolute Maximum Ratings Electrical Characteristics(Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 500 V V 500 V I = 250A, V = 0VDSS (BR) DSS D GSV 20 V I 500 nA V = 20VGSS GSS GSI 2.5 A I 250 A V = 500V, V = 0VD DSS DS GSI 10 (Tch 150C) A V 2.0 4.0 V V = 10V, I = 250AD (

2SK1159, 2SK1160Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driverOutlineTO-220AB1D231. GateG2. Drain(Flange)3. SourceS2SK1159, 2SK1160Absolute Maximum Ratings (Ta = 25

2SK1184External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics(Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 200 V V 200 V I = 250A, V = 0VDSS (BR) DSS D GSV 20 V I 500 nA V = 20VGSS GSS GSI 5I 250 A V = 200V, V = 0VD A DSS DS GSI 20 (Tch 150C) A V 2.0 4.0 V V = 10V, I = 250AD (p

2SK1180External dimensions 2 ...... FM100Absolute Maximum Ratings Electrical Characteristics(Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 500 V V 500 V I = 250A, V = 0VDSS (BR) DSS D GSV 20 V I 500 nA V = 20VGSS GSS GSI 10 A I 250 A V = 500V, V = 0VD DSS DS GSI 40 (Tch 150C) A V 2.0 4.0 V V = 10V, I = 250AD

2SK118 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK118 General Purpose and Impedance Converter and Unit: mm Condenser Microphone Applications High breakdown voltage: VGDS = -50 V High input impedance: I = -1 nA (max) (V = -30 V) GSS GS Low noise: NF = 0.5dB (typ.) (R = 100 k, f = 120 Hz) G Small package Maximum Ratings (Ta == 25

2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications Unit: mm High |Yfs|: |Y | = 15 mS (typ.) (V = 10 V, V = 0) fs DS GS High breakdown voltage: V = -50 V GDS Low noise: NF = 1.0dB (typ.) (V = 10 V, I = 0.5 mA, f = 1 kHz, R = 1 k) DS D G High input impedance: I = -1 nA (max) (V = -30 V) GS

2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1120 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.5 (typ.) High forward transfer admittance : |Y | 4.0 S (typ.) fs = Low leakage current : I = 300 A (max) (V = 800 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V (V = 10 V, I = 1

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2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1119 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 3.0 (typ.) High forward transfer admittance : |Y | = 2.0 S (typ.) fs Low leakage current : I = 300 A (max) (V = 800 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V (V = 10 V, I = 1

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2SK1167, 2SK1168 Silicon N Channel MOS FET REJ03G0915-0200 (Previous: ADE-208-1253) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A(Package name: T

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1153, 2SK1154 Silicon N Channel MOS FET REJ03G0908-0200 (Previous: ADE-208-1246) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AC-A(Package name: T

2SK1161, 2SK1162 Silicon N Channel MOS FET REJ03G0912-0200 (Previous: ADE-208-1250) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A(Package name: T

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1155, 2SK1156 Silicon N Channel MOS FET REJ03G0909-0200 (Previous: ADE-208-1247) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AC-A(Package name: T

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1151(L), 2SK1151(S) 2SK1152(L), 2SK1152(S) Silicon N Channel MOS FET REJ03G0907-0200 (Previous: ADE-208-1245) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code:

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1165, 2SK1166 Silicon N Channel MOS FET REJ03G0914-0200 (Previous: ADE-208-1252) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A(Package name: T

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1159, 2SK1160 Silicon N Channel MOS FET REJ03G0911-0200 (Previous: ADE-208-1249) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline RENESAS Package code: PRSS0004AC-A

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1157, 2SK1158 Silicon N Channel MOS FET REJ03G0910-0200 (Previous: ADE-208-1248) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline RENESAS Package code: PRSS0004AC-A(P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet 2SK1151(L), 2SK1151(S), R07DS0397EJ03002SK1152(L), 2SK1152(S) (Previous: REJ03G0907-0200)Rev.3.00Silicon N Channel MOS FET May 16, 2011Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outlin

DATA SHEETJUNCTION FIELD EFFECT TRANSISTOR2SK1108N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORFOR IMPEDANCE CONVERTER OF ECMDESCRIPTION The 2SK1108 is suitable for converter of ECM.FEATURES Compact package High forward transfer admittance1000 S TYP. (IDSS = 100 A)1600 S TYP. (IDSS = 200 A) Includes diode and high resistance at G - SORDERING INFORM

DATA SHEETJUNCTION FIELD EFFECT TRANSISTOR2SK1109N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORFOR IMPEDANCE CONVERTER OF ECMDESCRIPTIONPACKAGE DRAWING (Unit: mm) The 2SK1109 is suitable for converter of ECM.0.8FEATURES Compact package1. Source High forward transfer admittance2. Drain3. Gate1000 S TYP. (IDSS = 100 A)1 21600 S TYP. (IDSS = 200

Silicon Junction FETs (Small Signal) 2SK11032SK1103Silicon N-Channel JunctionUnit : mmFor switching+0.22.8 0.3Complementary with 2SJ163 +0.250.65 0.15 1.5 0.05 0.65 0.15 Features1Low ON-resistanceLow-noise characteristics32 Absolute Maximum Ratings (Ta = 25C)Parameter Symbol Rating Unit0.1 to 0.3Gate-Drain voltage VGDS 65 V0.4 0.2Drain c

Silicon Junction FETs (Small Signal) 2SK11042SK1104Silicon N-Channel JunctionUnit : mmFor switching4.0 0.2Complementary with 2SJ164 FeaturesLow ON-resistanceLow-noise characteristicsmarking1 2 3 Absolute Maximum Ratings (Ta = 25C)Parameter Symbol Rating Unit1.27 1.271 : SourceGate-Drain voltage VGDS 65 V 2.54 0.152 : GateDrain current ID 20 mA3

UTC K1109 JUNCTION FIELD EFFECT TRANSISTORN-CHANNEL JFET FORELECTRET CONDENSERMICROPHONE1 2DESCRIPTION The UTC K1109 is N-channel JFET for electretcondenser microphone.3FEATURES*High gm implies low transfer loss*Built-in gate-source diode and resistor implies fastTOP VIEW power on settling timeSOT-23 1:SOURCE 2:DRAIN 3:GATEABSOLUTE MAXIMUM RATINGS ( Operating tem

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2SK1197Silicon N-Channel enhanced MOS FETApplicationHigh frequency amplifierFeatures High endurance capability against static electrical breakdown (C = 200pF) Between Gate from Source : 500 V Typ Between Drain from Source : 1000 V Min, 1500 V Typ Wide forward transfer admittance|yfs| = 150 mS Typ High breakdown voltage VDSS = 100V Small output capacitance

2SK1169, 2SK1170Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converterOutlineTO-3PD1G231. Gate2. Drain(Flange)S3. Source2SK1169, 2SK1170Absolute Maximum Ratings (Ta = 25C)Item Symbol

2SK1185External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 100 V V 100 V I = 250A, V = 0VDSS (BR) DSS D GSV 20 V I 500 nA V = 20VGSS GSS GSI 5I 250 A V = 100V, V = 0VD A DSS DS GSI 20 (Tch 150C) A V 2.0 4.0 V V = 10V, I = 250AD (

2SK1191External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics(Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 60 V V 60 V I = 250A, V = 0VDSS (BR) DSS D GSV 20 V I 500 nA V = 20VGSS GSS GSI 30 A I 250 A V = 60V, V = 0VD DSS DS GSI 120 (Tch 150C) A V 2.0 4.0 V V = 10V, I = 250AD (p

2SK1172

2SK1190External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics(Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 60 V V 60 V I = 250A, V = 0VDSS (BR) DSS D GSV 20 V I 500 nA V = 20VGSS GSS GSI 22 A I 250 A V = 60V, V = 0VD DSS DS GSI 88 (Tch 150C) A V 2.0 4.0 V V = 10V, I = 250AD (pu

2SK1181External dimensions 2 ...... FM100Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 500 V V 500 V I = 250A, V = 0VDSS (BR) DSS D GSV 20 V I 500 nA V = 20VGSS GSS GSI 13 A I 250 A V = 500V, V = 0VD DSS DS GSI 52 (Tch 150C) A V 2.0 4.0 V V = 10V, I = 250A

Databook.fxp 1/13/99 2:09 PM Page D-301/99 D-3Japanese Equivalent JFET TypesSilicon Junction Field-Effect Transistors2SK113 2SK152 2SK363 2SJ44JapaneseIFN113 IFN152 IFN363 IFP44InterFETNJ132 NJ132L NJ450 PJ99ProcessN N N P UnitChannel Channel Channel Channel Limit ParametersV 50 20 40 25 BVGSSMin1.0 0.1 1.0 1.0 nAIGSS( 20 V) (10 V) ( 30 V) (

SMD Type MOSFETN-Channel Junction Field Effect Transistors2SK1109SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 10m A1 2 High forward transfer admittance+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9-0.11000 s TYP. (IDSS = 100 A)1600 s TYP. (IDSS = 200 A) Includes diode and high resistance at G - S1. Drain2. So

SMD Type MOSFETN-Channel MOSFET2SK1133SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 50V1 2 ID = 100 mA+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 RDS(ON) 50 (VGS = 4V ) Complments the 2SJ1661.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 50V G

SMD Type MOSFETN-Channel MOSFET2SK1133SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) = 50V1 2 ID = 100 mA+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 50 (VGS = 4V ) +0.11.9 -0.2 Complments the 2SJ1661. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 5

isc N-Channel MOSFET Transistor 2SK1167FEATURESWith TO-3PN packagingLow drain-source on-resistance:RDS(ON) =0.36 (MAX)Enhancement mode:Vth = 3.0 to 4.0V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsDC-DC convertersUninterruptible power

isc N-Channel MOSFET Transistor 2SK1158FEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

isc N-Channel MOSFET Transistor 2SK1117FEATURESDrain Current I = 6.0A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.25(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

isc N-Channel MOSFET Transistor 2SK1120FEATURESDrain Current I = 8.0A@ T =25D CDrain Source Voltage-: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 1.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

isc N-Channel MOSFET Transistor 2SK1160FEATURESDrain Current I = 8.0A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK1162FEATURESWith TO-3PN packagingLow on-resistanceLow drive currentNo secondary breakdownEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsDC-DC convertersUninterruptible power supplyABS

isc N-Channel MOSFET Transistor 2SK1134DESCRIPTIONDrain Current I =45A@ T =25D CDrain Source Voltage-: V =50V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 50 V

isc N-Channel MOSFET Transistor 2SK1115FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 55m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

isc N-Channel MOSFET Transistor 2SK1199DESCRIPTIONDrain Current I = 2A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and rel

isc N-Channel MOSFET Transistor 2SK1170FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.27(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

isc N-Channel MOSFET Transistor 2SK1114FEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 70m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

isc N-Channel MOSFET Transistor 2SK1151LFEATURESDrain Current I = 1.5A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 5.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

isc N-Channel MOSFET Transistor 2SK1153FEATURESDrain Current I = 3.0A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 2.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

isc N-Channel MOSFET Transistor 2SK1116FEATURESDrain Current I = 25A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 58m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

isc N-Channel MOSFET Transistor 2SK1161FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

isc N-Channel MOSFET Transistor 2SK1152LFEATURESDrain Current I = 1.5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 6.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

isc N-Channel MOSFET Transistor 2SK1155FEATURESDrain Current I = 5.0A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

isc N-Channel MOSFET Transistor 2SK1172DESCRIPTIONDrain Current I =3.5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)

isc N-Channel MOSFET Transistor 2SK1169FEATURESWith TO-3P packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sour

isc N-Channel MOSFET Transistor 2SK1152SFEATURESDrain Current I = 1.5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 6.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

isc N-Channel MOSFET Transistor 2SK1154FEATURESDrain Current I = 3.0A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

isc N-Channel MOSFET Transistor 2SK1197FEATURESDrain Current I = 0.5A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

isc N-Channel MOSFET Transistor 2SK1119FEATURESDrain Current I = 4.0A@ T =25D CDrain Source Voltage-: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 3.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

isc N-Channel MOSFET Transistor 2SK1151SFEATURESDrain Current I = 1.5A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 5.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

isc N-Channel MOSFET Transistor 2SK1168FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

isc N-Channel MOSFET Transistor 2SK1165FEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

isc N-Channel MOSFET Transistor 2SK1164FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

isc N-Channel MOSFET Transistor 2SK1166FEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

isc N-Channel MOSFET Transistor 2SK1156FEATURESDrain Current I = 5.0A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

isc N-Channel MOSFET Transistor 2SK1118DESCRIPTIONDrain Current I =6A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and rela

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1171 DESCRIPTION Drain Current ID=4A@ TC=25 Drain Source Voltage- : VDSS=800V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage

isc N-Channel MOSFET Transistor 2SK1163FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

isc N-Channel MOSFET Transistor 2SK1124FEATURESDrain Current I = 45A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 30m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

isc N-Channel MOSFET Transistor 2SK1105DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulators, UPS,DC-DC converters ,general purpose power amplifier applications .ABSOLUTE MAXIMUM RATIN

isc N-Channel MOSFET Transistor 2SK1157FEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

isc N-Channel MOSFET Transistor 2SK1180DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for low voltage,high speed applications,Chopper regulator,DC-DC converter and

isc N-Channel MOSFET Transistor 2SK1159FEATURESDrain Current I = 8.0A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo