All MOSFET. SML1001R3BN Datasheet

 

SML1001R3BN MOSFET. Datasheet pdf. Equivalent


   Type Designator: SML1001R3BN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 310 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 2950 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO247

 SML1001R3BN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SML1001R3BN Datasheet (PDF)

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