2SK1507 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1507
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 150 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-220F
2SK1507 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1507 Datasheet (PDF)
2sk1507.pdf
isc N-Channel MOSFET Transistor 2SK1507DESCRIPTIONDrain Current I =9A@ T =25D CDrain Source Voltage-: V =600 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor controls,relay and soleno
2sk1503.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1503 DESCRIPTION Drain Current ID=10A@ TC=25 Drain Source Voltage- : VDSS=500 (Min) APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RA
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