2SK1562
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1562
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 12
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65
Ohm
Package:
TO-220
2SK1562
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1562
Datasheet (PDF)
..1. Size:212K inchange semiconductor
2sk1562.pdf 
isc N-Channel MOSFET Transistor 2SK1562DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =450 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX
8.1. Size:82K renesas
2sk1566.pdf
2SK1566, 2SK1567 Silicon N Channel MOS FET REJ03G0953-0200 (Previous: ADE-208-1293) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0003AD-A(Package name: T
8.2. Size:210K inchange semiconductor
2sk1569.pdf
isc N-Channel MOSFET Transistor 2SK1569DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesinged for high efficiency switch mode power supply.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)
8.3. Size:212K inchange semiconductor
2sk1565.pdf
isc N-Channel MOSFET Transistor 2SK1565DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =900 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI
8.4. Size:213K inchange semiconductor
2sk1564.pdf
isc N-Channel MOSFET Transistor 2SK1564DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =800 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI
8.5. Size:213K inchange semiconductor
2sk1563.pdf
isc N-Channel MOSFET Transistor 2SK1563DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =500 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX
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, GMM3x100-01X1-SMD
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, GMM3x180-004X2-SMD
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, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
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