2SK1704
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1704
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4
Ohm
Package:
TO-220F
2SK1704
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1704
Datasheet (PDF)
..1. Size:212K inchange semiconductor
2sk1704.pdf 
isc N-Channel MOSFET Transistor 2SK1704DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 VDSS
8.1. Size:318K toshiba
2sk170.pdf
2SK170 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK170 Low Noise Audio Amplifier Applications Unit: mm Recommended for first stages of EQ and M.C. head amplifiers. High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) High breakdown voltage: VGDS = -40 V Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = 10 V, ID = 1 mA, f = 1 kHz)
8.2. Size:212K inchange semiconductor
2sk1707.pdf
isc N-Channel MOSFET Transistor 2SK1707DESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplies, converters and power motor controlsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drai
8.3. Size:209K inchange semiconductor
2sk1706.pdf
isc N-Channel MOSFET Transistor 2SK1706DESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplies, converters and power motor controlsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So
8.4. Size:215K inchange semiconductor
2sk1705.pdf
isc N-Channel MOSFET Transistor 2SK1705DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS Power supplies, converters and power motor controlsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain
8.5. Size:212K inchange semiconductor
2sk1701.pdf
isc N-Channel MOSFET Transistor 2SK1701DESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switching.Low drive current.Suitable for motor control,switching regulator and DC DC converter.ABSOLUTE MAXIMUM RATING
8.6. Size:212K inchange semiconductor
2sk1709.pdf
isc N-Channel MOSFET Transistor 2SK1709DESCRIPTIONDrain Current I = 6A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplies, converters and power motor controlsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drai
8.7. Size:212K inchange semiconductor
2sk1703.pdf
isc N-Channel MOSFET Transistor 2SK1703DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switching.Low drive current.Suitable for motor control,switching regulator and DC DC converter.ABSOLUTE MAXIMUM RATINGS
8.8. Size:209K inchange semiconductor
2sk1708.pdf
isc N-Channel MOSFET Transistor 2SK1708DESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplies, converters and power motor controlsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So
8.9. Size:213K inchange semiconductor
2sk1700.pdf
isc N-Channel MOSFET Transistor 2SK1700DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switching.Low drive current.Suitable for motor control,switching regulator and DC DC converter.ABSOLUTE MAXIMUM RATING
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