All MOSFET. 2SK1707 Datasheet

 

2SK1707 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK1707
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
   Package: TO220

 2SK1707 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK1707 Datasheet (PDF)

 ..1. Size:212K  inchange semiconductor
 2sk1707.pdf

2SK1707 2SK1707

isc N-Channel MOSFET Transistor 2SK1707DESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplies, converters and power motor controlsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drai

 8.1. Size:318K  toshiba
 2sk170.pdf

2SK1707 2SK1707

2SK170 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK170 Low Noise Audio Amplifier Applications Unit: mm Recommended for first stages of EQ and M.C. head amplifiers. High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) High breakdown voltage: VGDS = -40 V Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = 10 V, ID = 1 mA, f = 1 kHz)

 8.2. Size:209K  inchange semiconductor
 2sk1706.pdf

2SK1707 2SK1707

isc N-Channel MOSFET Transistor 2SK1706DESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplies, converters and power motor controlsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So

 8.3. Size:215K  inchange semiconductor
 2sk1705.pdf

2SK1707 2SK1707

isc N-Channel MOSFET Transistor 2SK1705DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS Power supplies, converters and power motor controlsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain

 8.4. Size:212K  inchange semiconductor
 2sk1701.pdf

2SK1707 2SK1707

isc N-Channel MOSFET Transistor 2SK1701DESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switching.Low drive current.Suitable for motor control,switching regulator and DC DC converter.ABSOLUTE MAXIMUM RATING

 8.5. Size:212K  inchange semiconductor
 2sk1709.pdf

2SK1707 2SK1707

isc N-Channel MOSFET Transistor 2SK1709DESCRIPTIONDrain Current I = 6A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplies, converters and power motor controlsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drai

 8.6. Size:212K  inchange semiconductor
 2sk1703.pdf

2SK1707 2SK1707

isc N-Channel MOSFET Transistor 2SK1703DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switching.Low drive current.Suitable for motor control,switching regulator and DC DC converter.ABSOLUTE MAXIMUM RATINGS

 8.7. Size:209K  inchange semiconductor
 2sk1708.pdf

2SK1707 2SK1707

isc N-Channel MOSFET Transistor 2SK1708DESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplies, converters and power motor controlsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So

 8.8. Size:213K  inchange semiconductor
 2sk1700.pdf

2SK1707 2SK1707

isc N-Channel MOSFET Transistor 2SK1700DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switching.Low drive current.Suitable for motor control,switching regulator and DC DC converter.ABSOLUTE MAXIMUM RATING

 8.9. Size:212K  inchange semiconductor
 2sk1704.pdf

2SK1707 2SK1707

isc N-Channel MOSFET Transistor 2SK1704DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 VDSS

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
Back to Top