2SK1917
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1917
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 40
nS
Cossⓘ -
Output Capacitance: 140
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4
Ohm
Package:
TO-220F
2SK1917
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1917
Datasheet (PDF)
..1. Size:212K inchange semiconductor
2sk1917.pdf 
isc N-Channel MOSFET Transistor 2SK1917DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UN
0.1. Size:263K fuji
2sk1917-mr.pdf
FUJI POWER MOSFET2SK1917-MRN-CHANNEL SILICON POWER MOSFETF-II SERIESOutline DrawingsFeaturesHigh speed switchingTO-220F15Low on-resistanceNo secondary breakdownLow driving powerHigh voltageVGS=30V GuaranteeApplications Switching regulators2.54UPS DC-DC converters3. SourceGeneral purpose power amplifierJEDECEIAJ SC-67Equivalent circuit schematicMax
0.2. Size:217K inchange semiconductor
2sk1917-m.pdf
isc N-Channel MOSFET Transistor 2SK1917-MDESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSY
8.3. Size:48K inchange semiconductor
2sk1913.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1913 DESCRIPTION Drain Current ID= 4A@ TC=25 Drain Source Voltage- : VDSS=600V(Min) Fast Switching Speed APPLICATIONS High speed ,high current switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source V
8.4. Size:221K inchange semiconductor
2sk1916.pdf
isc N-Channel MOSFET Transistor 2SK1916DESCRIPTIONDrain Current I =18A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorUPSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNIT
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