All MOSFET. 2SK1981 Datasheet

 

2SK1981 Datasheet and Replacement


   Type Designator: 2SK1981
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.76 Ohm
   Package: TO220
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2SK1981 Datasheet (PDF)

 ..1. Size:215K  inchange semiconductor
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2SK1981

isc N-Channel MOSFET Transistor 2SK1981DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 V

 0.1. Size:212K  fuji
2sk1981-01.pdf pdf_icon

2SK1981

N-channel MOS-FET2SK1981-01FAP-IIA Series 500V 0,76 10A 80W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equi

 8.1. Size:433K  1
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2SK1981

 8.2. Size:31K  panasonic
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2SK1981

Power F-MOS FETs 2SK19802SK1980Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 15mJ3.4 0.38.5 0.26.0 0.5 1.0 0.1 VGSS=30V guaranteedHigh-speed switching : tf= 25nsNo secondary breakdown1.5max. 1.1max. ApplicationsNon-contact relay0.8 0.1 0.5max.Solenoid drive 2.54 0.3Motor drive5.08 0.5Control

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History: 20N03L-TO252 | 2N6762JTXV

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