2SK1985 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1985
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
Package: TO-220F
2SK1985 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1985 Datasheet (PDF)
2sk1985.pdf
isc N-Channel MOSFET Transistor 2SK1985DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNI
2sk1980.pdf
Power F-MOS FETs 2SK19802SK1980Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 15mJ3.4 0.38.5 0.26.0 0.5 1.0 0.1 VGSS=30V guaranteedHigh-speed switching : tf= 25nsNo secondary breakdown1.5max. 1.1max. ApplicationsNon-contact relay0.8 0.1 0.5max.Solenoid drive 2.54 0.3Motor drive5.08 0.5Control
2sk198.pdf
Silicon Junction FETs (Small Signal) 2SK1982SK198Silicon N-Channel JunctionUnit : mmFor low-frequency amplification+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15 Features High mutual conductance gm1 Low noise type Downsizing of sets by mini-type package and automatic insertion by3taping/magazine packing are available.2 Absolute Maximum Ratings (Ta = 25
2sk1986-01.pdf
FUJI POWER MOSFET2SK1986-01N-CHANNEL SILICON POWER MOSFETFAP-IIA SERIESOutline DrawingsFeaturesHigh speed switchingTO-220ABLow on-resistanceNo secondary breakdownLow driving powerHigh voltageVGS=30V GuaranteeAvalanche-proofApplicationsSwitching regulatorsUPS3. Source DC-DC convertersJEDEC TO-220ABGeneral purpose power amplifierEIAJ SC-46Equivalent c
2sk1981-01.pdf
N-channel MOS-FET2SK1981-01FAP-IIA Series 500V 0,76 10A 80W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equi
2sk1983-01.pdf
N-channel MOS-FET2SK1983-01FAP-IIA Series 900V 4 3A 60W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equivale
2sk1984-01mr.pdf
2SK1984-01MR N-channel MOS-FETFAP-IIA Series 900V 4 3A 40W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equival
2sk1982.pdf
isc N-Channel MOSFET Transistor 2SK1982DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UN
2sk1984.pdf
isc N-Channel MOSFET Transistor 2SK1984DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNI
2sk1981.pdf
isc N-Channel MOSFET Transistor 2SK1981DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 V
2sk1983.pdf
isc N-Channel MOSFET Transistor 2SK1983DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
2sk1982-01m.pdf
isc N-Channel MOSFET Transistor 2SK1982-01MDESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)a
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: HM3N90F
