All MOSFET. 2SK1985 Datasheet

 

2SK1985 Datasheet and Replacement


   Type Designator: 2SK1985
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
   Package: TO-220F
 

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2SK1985 Datasheet (PDF)

 ..1. Size:213K  inchange semiconductor
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2SK1985

isc N-Channel MOSFET Transistor 2SK1985DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNI

 0.1. Size:138K  fuji
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2SK1985

 8.1. Size:433K  1
2sk1988 2sk1989.pdf pdf_icon

2SK1985

 8.2. Size:31K  panasonic
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2SK1985

Power F-MOS FETs 2SK19802SK1980Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 15mJ3.4 0.38.5 0.26.0 0.5 1.0 0.1 VGSS=30V guaranteedHigh-speed switching : tf= 25nsNo secondary breakdown1.5max. 1.1max. ApplicationsNon-contact relay0.8 0.1 0.5max.Solenoid drive 2.54 0.3Motor drive5.08 0.5Control

Datasheet: 2SK1941 , 2SK1942 , 2SK1974 , 2SK1976 , 2SK1981 , 2SK1982 , 2SK1983 , 2SK1984 , 8205A , 2SK2002-01M , 2SK2003-01M , 2SK2019-01 , 2SK2020-01 , 2SK2021-01 , 2SK2022-01M , 2SK2024-01 , 2SK2025 .

History: DMN10H100SK3 | AP85T03GS-HF | RUF020N02 | SL4N150T | DMN4034SSS | BSO033N03MSG | 2SK1696

Keywords - 2SK1985 MOSFET datasheet

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