2SK2117 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK2117
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 280 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO-220F
2SK2117 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK2117 Datasheet (PDF)
2sk2116 2sk2117.pdf
2SK2116, 2SK2117Silicon N-Channel MOS FETADE-208-1347 (Z)1st. EditionMar. 2001ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulatorOutlineTO-220CFM1D231. GateG2. Drain3. SourceS2SK2116, 2SK2117Ordering InformationType No. VD
2sk2117.pdf
isc N-Channel MOSFET Transistor 2SK2117DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 VD
2sk2112.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2112N-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2SK2112 is a N-channel MOS FET of a vertical type andPACKAGE DIMENSIONS (in mm)is a switching element that can be directly driven by the output of4.5 0.1an IC operating at 5 V.1.6 0.2 1.5 0.1This product has a low ON resistance and superb switchingcharacteristics and is idea
2sk2110.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2110N-CHANNEL MOSFET FOR HIGH-SPEED SWITCHING DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK2110 is a N-channel MOSFET of a vertical type 4.5 0.1and is a switching element that can be directly driven by the output of an IC operating at 5 V. 1.6 0.2 1.5 0.1 This product has a low on-state resistance and superb switching charact
2sk2114 2sk2115.pdf
2SK2114, 2SK2115Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulatorOutlineTO-220CFM1D231. GateG2. Drain3. SourceS2SK2114, 2SK2115Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to so
2sk2118.pdf
2SK2118Silicon N-Channel MOS FETADE-208-1348 (Z)1st. EditionMar. 2001ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator, DC-DC converter,Motor ControlOutlineTO-220CFM1D231. GateG2. Drain3. SourceS2SK2118Absolute Maximum Rat
2sk2112.pdf
SMD Type MOSFETN-Channel MOSFET2SK21121.70 0.1 Features VDS (V) = 100V ID = 1 A0.42 0.10.46 0.1 RDS(ON) 0.8 (VGS = 10V)Drain (D) RDS(ON) 1.2 (VGS = 4V)1.Gate2.DrainGate (G)Internal diode3.SourceGate protectiondiodeSource (S) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 100
2sk2110.pdf
SMD Type MOSFETN-Channel MOSFET2SK21101.70 0.1 Features VDS (V) = 100V ID = 0.5 ADrain (D)0.42 0.10.46 0.1 RDS(ON) 1.2 (VGS = 10V) RDS(ON) 1.5 (VGS = 4V)Gate (G)1.GateInternal diode2.DrainGate3.SourceprotectiondiodeSource (S) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 10
2sk2111.pdf
SMD Type MOSFETN-Channel MOSFET2SK21111.70 0.1 Features VDS (V) = 60V ID = 1 ADrain (D) RDS(ON) 0.45 (VGS = 10V) 0.42 0.10.46 0.1 RDS(ON) 0.6 (VGS = 4V)Gate (G)Internal diode1.GateGate protection2.Draindiode3.SourceSource (S) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V
2sk2116.pdf
isc N-Channel MOSFET Transistor 2SK2116DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VD
2sk2118.pdf
isc N-Channel MOSFET Transistor 2SK2118DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulators ,DC-DC converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain
2sk2114.pdf
isc N-Channel MOSFET Transistor 2SK2114DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VD
2sk2115.pdf
isc N-Channel MOSFET Transistor 2SK2115DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSHigh speed power switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSuitable for Switching regulatorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Volta
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
