BUK452-60B
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK452-60B
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 60
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 14
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 25
nS
Cossⓘ -
Output Capacitance: 150
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15
Ohm
Package:
TO-220AB
BUK452-60B
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK452-60B
Datasheet (PDF)
5.1. Size:54K philips
buk452-60a-b.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK452-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK452 -60A -60BThe device is intended for use in VDS Drain-source voltage 60 60 VSwitched Mode Power Supplies ID Drain current (DC) 15 14 A(SMPS), motor
5.2. Size:54K philips
buk452-60a-b 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK452-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK452 -60A -60BThe device is intended for use in VDS Drain-source voltage 60 60 VSwitched Mode Power Supplies ID Drain current (DC) 15 14 A(SMPS), motor
5.3. Size:228K inchange semiconductor
buk452-60.pdf
isc N-Channel MOSFET Transistor BUK452-60A/BDESCRIPTIONDrain Source Voltage-: V =60V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance applicationABSOLUTE MAXIMUM
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