BUK454-200A PDF and Equivalents Search

 

BUK454-200A Specs and Replacement

Type Designator: BUK454-200A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9.2 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO-220AB

BUK454-200A substitution

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BUK454-200A datasheet

 0.1. Size:58K  philips
buk454-200a-b 1.pdf pdf_icon

BUK454-200A

Philips Semiconductors Product Specification PowerMOS transistor BUK454-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for use in surface VDS Drain-source voltage 200 V mount applications. ID Drain current (DC) 9.2 A The device is intended for use in Ptot Total power diss... See More ⇒

 4.1. Size:228K  inchange semiconductor
buk454-200.pdf pdf_icon

BUK454-200A

isc N-Channel MOSFET Transistor BUK454-200A/B DESCRIPTION Drain Source Voltage- V =200V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMU... See More ⇒

 7.1. Size:64K  philips
buk454-800a-b.pdf pdf_icon

BUK454-200A

Philips Semiconductors Product Specification PowerMOS transistor BUK454-800A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK454 -800A -800B The device is intended for use in VDS Drain-source voltage 800 800 V Switched Mode Power Supplies ID Drain current (DC) 2.4 2.0 A (SMPS)... See More ⇒

 7.2. Size:51K  philips
buk454-60h 1.pdf pdf_icon

BUK454-200A

Philips Semiconductors Product specification PowerMOS transistor BUK454-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 41 A automotive applications, Switched Ptot Total power dissipation 125 W Mod... See More ⇒

Detailed specifications: BUK444-800, BUK445-200B, BUK445-60H, BUK453-60B, BUK452-60A, BUK452-60B, BUK453-100B, BUK453-60A, IRF840, BUK445-60B, BUK454-200B, BUK455-60A, BUK455-60B, BUK445-60A, BUK456-60A, BUK456-60B, 9N90L-TF1

Keywords - BUK454-200A MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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