BUK445-60B Datasheet and Replacement. Cross Reference Search

BUK445-60B Datasheet (PDF)

5.1. Size:347K philips
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5.2. Size:109K philips
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Philips Semiconductors Product specification PowerMOS transistor BUK445-60H GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic full-pack envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 22.5 AAutomotive applications, Switched Ptot Total power dissipatio

5.3. Size:230K inchange semiconductor
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK445-600A/BDESCRIPTIONDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, And in general purpose switchingresistance applicationABSOLUTE

5.4. Size:230K inchange semiconductor
buk445-60.pdf pdf_icon

isc N-Channel MOSFET Transistor BUK445-60A/BDESCRIPTIONDrain Source Voltage-: V =60V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, And in general purpose switchingresistance applicationABSOLUTE MAXIMUM RATINGS(T =25)

Datasheet: BUK445-200B , BUK445-60H , BUK453-60B , BUK452-60A , BUK452-60B , BUK453-100B , BUK453-60A , BUK454-200A , 20N60 , BUK454-200B , BUK455-60A , BUK455-60B , BUK445-60A , BUK456-60A , BUK456-60B , 9N90L-TF1 , BUK444-200B .