TSA20N50M Datasheet and Replacement. Cross Reference Search

TSA20N50M Datasheet (PDF)

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TSA20N50M 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 20A,500V,Max.RDS(on)=0.28 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 70nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and

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TSA20N60MR600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 20A,600V,RDS(on)=0.4 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 57nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and withs

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TSA20N65MR650V N-Channel MOSFETGeneral Description Features This Power MOSFET is produced using Truesemis 20A,650V,RDS(on)=0.48 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 57nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and with

Datasheet: BUZ211 , BUZ330 , IRFAC32 , JCS24N50WH , JCS24N50ABH , RU6888R3 , SPP77N06S2-12 , SPB77N06S2-12 , 2SK3878 , M7002NND03 , M7002TTD03 , MC3406 , MC3541 , MCD04N60 , MCD04N65 , MCD3410 , MS10N60 .