MCD04N60 PDF and Equivalents Search

 

MCD04N60 Specs and Replacement

Type Designator: MCD04N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO-251

MCD04N60 substitution

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MCD04N60 datasheet

 ..1. Size:413K  mcc
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MCD04N60

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 7.1. Size:428K  mcc
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MCD04N60

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Detailed specifications: RU6888R3, SPP77N06S2-12, SPB77N06S2-12, TSA20N50M, M7002NND03, M7002TTD03, MC3406, MC3541, AON7408, MCD04N65, MCD3410, MS10N60, MS10N65, MS10N80, MS12N60, MS12N65, MS13N50

Keywords - MCD04N60 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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