MCD04N60 Specs and Replacement
Type Designator: MCD04N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 125 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO-251
MCD04N60 substitution
- MOSFET ⓘ Cross-Reference Search
MCD04N60 datasheet
Detailed specifications: RU6888R3, SPP77N06S2-12, SPB77N06S2-12, TSA20N50M, M7002NND03, M7002TTD03, MC3406, MC3541, AON7408, MCD04N65, MCD3410, MS10N60, MS10N65, MS10N80, MS12N60, MS12N65, MS13N50
Keywords - MCD04N60 MOSFET specs
MCD04N60 cross reference
MCD04N60 equivalent finder
MCD04N60 pdf lookup
MCD04N60 substitution
MCD04N60 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: SEF401002 | APT5024SFLLG
🌐 : EN ES РУ
LIST
Last Update
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10
Popular searches
2sa1106 | 2sb56 | 2sc1451 datasheet | 2sc373 | a1023 datasheet | 2sc1080 | 2sb618 | 2sc1328