MCD04N65 Specs and Replacement
Type Designator: MCD04N65
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 12.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 180 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO-251
MCD04N65 substitution
- MOSFET ⓘ Cross-Reference Search
MCD04N65 datasheet
Detailed specifications: SPP77N06S2-12, SPB77N06S2-12, TSA20N50M, M7002NND03, M7002TTD03, MC3406, MC3541, MCD04N60, 2SK3878, MCD3410, MS10N60, MS10N65, MS10N80, MS12N60, MS12N65, MS13N50, MS13P21
Keywords - MCD04N65 MOSFET specs
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