MS10N60 MOSFET Datasheet: N-Ch, 600V, 9.5A. Full specification with pinout and replacement list

MS10N60 Specs and Replacement

   Type Designator: MS10N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 69 nS
   Cossⓘ - Output Capacitance: 166 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.73 Ohm
   Package: TO-220

MS10N60 substitution

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MS10N60 datasheet

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MS10N65 N-Channel Enhancement Mode Power MOSFET Description The MS10N65 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features BVDSS=700V typically @ Tj=150... See More ⇒

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MS10N80 800V N-Channel MOSFET Description The MS10N80 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intrinsic... See More ⇒