MS20N04NE MOSFET. Datasheet pdf. Equivalent

   Type Designator: MS20N04NE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 24 °C
   Qgⓘ - Total Gate Charge: 13.4 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: SOT-23

MS20N04NE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS