MS20N04NE Datasheet and Replacement. Cross Reference Search

MS20N04NE Datasheet (PDF)

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Bruckewell Technology Corp., Ltd. MS20N04NE N-Channel 20V (D-S) MOSFET General Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-

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MS20N06N-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technologyDS(on)94 @ VGS = 10V19 Low thermal impedance60109 @ VGS = 4.5V18 Fast switching speedTypical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion CircuitsABSOLUTE MAXIMUM RATINGS (TA = 25C U

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HMS20N15KN-Channel Super Trench Power MOSFET Description The HMS20N15K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectific

Datasheet: MS13N50 , MS13P21 , MS14N60 , MS14P21 , MS15N50 , MS15N60 , MS17N03Q8 , MS18N50 , 4N60 , MS20N06 , MS23N22 , MS23N26 , MS23N36 , MS23P01 , MS23P21 , MS23P25 , MS23P39 .