MS20N04NE MOSFET. Datasheet pdf. Equivalent
Type Designator: MS20N04NE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 24 °C
Qgⓘ - Total Gate Charge: 13.4 nC
Maximum Drain-Source On-State Resistance (Rds): 0.032 Ohm
Package: SOT-23
MS20N04NE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MS20N04NE Datasheet (PDF)
ms20n04ne.pdf
Bruckewell Technology Corp., Ltd. MS20N04NE N-Channel 20V (D-S) MOSFET General Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-
ms20n06.pdf
MS20N06N-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technologyDS(on)94 @ VGS = 10V19 Low thermal impedance60109 @ VGS = 4.5V18 Fast switching speedTypical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion CircuitsABSOLUTE MAXIMUM RATINGS (TA = 25C U
hms20n15k.pdf
HMS20N15KN-Channel Super Trench Power MOSFET Description The HMS20N15K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectific
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
