MS4N60C MOSFET Datasheet: N-Ch, 600V, 4.5A. Full specification with pinout and replacement list

MS4N60C Specs and Replacement

Type Designator: MS4N60C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO-220

MS4N60C substitution

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MS4N60C datasheet

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HV MOSFET DIE SPECIFICATION Product Name BW-MS4N60C Chip Features Front side Back side Chip Size (um) Thickness (um) Pad Size-Gate (um) Pad Size-Source (um) 3,180 * 2,720 350 420 * 520 900 * 1900 Referenced PKG Electrical Ratings TC = 25 Cunless otherwise noted Absolute Maximum Ratings Symbol Parameter Value Units VDSS Drain to Source Voltage 600 V VGS Gate to Source Vol... See More ⇒

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MS4N60 N-Channel Enhancement Mode Power MOSFET Description The MS4N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features BVDSS=650V typically @ Tj=150 ... See More ⇒

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ms4n65.pdf pdf_icon

Bruckewell Technology Corp., Ltd. http //www.bruckewell-semi.com Product Specification N-Channel Enhancement Mode Power MOSFET MS4N65 Description The MS4N65 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred... See More ⇒

Detailed specifications: MS34N34, MS3N80, MS40N06, MS44P15, MS4541C, MS48P25, MS49P63, MS4N60, 2SK3568, MS4N65, MS50N06, MS5N50, MS5N50-A, MS5N60, MS60P02NE, MS69N68, MS6N40