MSAFZ50N10A PDF and Equivalents Search

 

MSAFZ50N10A Specs and Replacement

Type Designator: MSAFZ50N10A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 140 nS

Cossⓘ - Output Capacitance: 730 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: TO-276AB

MSAFZ50N10A substitution

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MSAFZ50N10A datasheet

 ..1. Size:44K  microsemi
 msaez50n10a msafz50n10a.pdf pdf_icon

MSAFZ50N10A

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 MSAEZ50N10A FAX (714) 966-5256 MSAFZ50N10A Features 100 Volts Ultrafast rectifier in parallel with the body diode (MSAE type only) 50 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 35 m Hermetically sealed, surface mount power package Low pa... See More ⇒

Detailed specifications: MSAEZ50N10A, MSAFR12N50A, MSAFR30N20A, MSAFR38N10A, MSAFX10N90A, MSAFX11P50A, MSAFX20N60A, MSAFX75N10A, IRFZ44N, MSB15N60, MSB22A04Q8, MSB55N03N3, MSC22N03, MSC37N03, MTC1421G6, MTC4503LQ8, MTC5806V8

Keywords - MSAFZ50N10A MOSFET specs

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