All MOSFET. MSAFZ50N10A Datasheet

 

MSAFZ50N10A Datasheet and Replacement


   Type Designator: MSAFZ50N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 730 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO-276AB
 

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MSAFZ50N10A Datasheet (PDF)

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MSAFZ50N10A

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220 MSAEZ50N10AFAX: (714) 966-5256MSAFZ50N10AFeatures100 Volts Ultrafast rectifier in parallel with the body diode (MSAE type only)50 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability35 m Hermetically sealed, surface mount power package Low pa

Datasheet: MSAEZ50N10A , MSAFR12N50A , MSAFR30N20A , MSAFR38N10A , MSAFX10N90A , MSAFX11P50A , MSAFX20N60A , MSAFX75N10A , IRFZ44N , MSB15N60 , MSB22A04Q8 , MSB55N03N3 , MSC22N03 , MSC37N03 , MTC1421G6 , MTC4503LQ8 , MTC5806V8 .

History: SSF3365 | RFW2N06RLE | BUZ216 | 2SK1837 | SI4N60L-TN3-R | HM32N20F | IRFB4620

Keywords - MSAFZ50N10A MOSFET datasheet

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