All MOSFET. MSAFZ50N10A Datasheet

 

MSAFZ50N10A MOSFET. Datasheet pdf. Equivalent


   Type Designator: MSAFZ50N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 225 nC
   trⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 730 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO-276AB

 MSAFZ50N10A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MSAFZ50N10A Datasheet (PDF)

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 msaez50n10a msafz50n10a.pdf

MSAFZ50N10A MSAFZ50N10A

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220 MSAEZ50N10AFAX: (714) 966-5256MSAFZ50N10AFeatures100 Volts Ultrafast rectifier in parallel with the body diode (MSAE type only)50 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability35 m Hermetically sealed, surface mount power package Low pa

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