MSC37N03 Datasheet and Replacement
Type Designator: MSC37N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 37 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 60 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
Package: SOIC-8
MSC37N03 substitution
MSC37N03 Datasheet (PDF)
msc37n03.pdf

Bruckewell Technology Corp., Ltd. http://www.bruckewell-semicon.com/ N-Channel 30-V (D-S) MOSFET MSC37N03 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as compu
Datasheet: MSAFX11P50A , MSAFX20N60A , MSAFX75N10A , MSAFZ50N10A , MSB15N60 , MSB22A04Q8 , MSB55N03N3 , MSC22N03 , IRF540 , MTC1421G6 , MTC4503LQ8 , MTC5806V8 , MTD10N10ELT4 , MTD120C10J4 , MTD20P03HDLT4 , MTD20P06HDLT4 , MTD2955VT4 .
History: APT56F60B2 | WMK15N65C2 | HGA082N10M | 2SK2808-01MR | AF4N65S | STF32NM50N | NTD5865N-1G
Keywords - MSC37N03 MOSFET datasheet
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History: APT56F60B2 | WMK15N65C2 | HGA082N10M | 2SK2808-01MR | AF4N65S | STF32NM50N | NTD5865N-1G



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