MTG9N50E Specs and Replacement
Type Designator: MTG9N50E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 350 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO-218-ISO
MTG9N50E substitution
- MOSFET ⓘ Cross-Reference Search
MTG9N50E datasheet
Detailed specifications: MTDP9933KQ8, MTE05N10FP, MTE130N20J3, MTE150P20H8, MTE55N10FP, MTE55N20J3, MTE6D5N12B0E3, MTE8D0N08H8, STP75NF75, MTH13N45, MTH13N50, MTH15N35, IPU25CN10N, IPB35CN10N, IPU33CN10N, IPB80CN10N, IPU78CN10N
Keywords - MTG9N50E MOSFET specs
MTG9N50E cross reference
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MTG9N50E substitution
MTG9N50E replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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