MTH13N50 Datasheet and Replacement
Type Designator: MTH13N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 180 nS
Cossⓘ - Output Capacitance: 500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO-218
MTH13N50 substitution
MTH13N50 Datasheet (PDF)
Datasheet: MTE130N20J3 , MTE150P20H8 , MTE55N10FP , MTE55N20J3 , MTE6D5N12B0E3 , MTE8D0N08H8 , MTG9N50E , MTH13N45 , IRF1010E , MTH15N35 , IPU25CN10N , IPB35CN10N , IPU33CN10N , IPB80CN10N , IPU78CN10N , MTH15N40 , MTH20N15 .
Keywords - MTH13N50 MOSFET datasheet
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History: SI4160DY | SP8K24FRA



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