MTH13N50 MOSFET. Datasheet pdf. Equivalent
Type Designator: MTH13N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 13 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 110 nC
Rise Time (tr): 180 nS
Drain-Source Capacitance (Cd): 500 pF
Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm
Package: TO-218
MTH13N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTH13N50 Datasheet (PDF)
0.1. mth13n45 mth13n50 mth15n35 mth15n40.pdf Size:729K _motorola
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