MTH5N100 Specs and Replacement
Type Designator: MTH5N100
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 250 nS
Cossⓘ - Output Capacitance: 350 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO-218
MTH5N100 substitution
- MOSFET ⓘ Cross-Reference Search
MTH5N100 datasheet
Detailed specifications: MTH15N35, IPU25CN10N, IPB35CN10N, IPU33CN10N, IPB80CN10N, IPU78CN10N, MTH15N40, MTH20N15, K4145, MTH5N95, MTH6N100, MTH6N100E, MTH6N55, MTH6N60, MTH8N35, MTH8N40, MTH8N55
Keywords - MTH5N100 MOSFET specs
MTH5N100 cross reference
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