MTH5N100 PDF and Equivalents Search

 

MTH5N100 Specs and Replacement

Type Designator: MTH5N100

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO-218

MTH5N100 substitution

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MTH5N100 datasheet

Detailed specifications: MTH15N35, IPU25CN10N, IPB35CN10N, IPU33CN10N, IPB80CN10N, IPU78CN10N, MTH15N40, MTH20N15, K4145, MTH5N95, MTH6N100, MTH6N100E, MTH6N55, MTH6N60, MTH8N35, MTH8N40, MTH8N55

Keywords - MTH5N100 MOSFET specs

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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 

 

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