MTH6N100 Specs and Replacement
Type Designator: MTH6N100
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 175 nS
Cossⓘ - Output Capacitance: 175 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO-218
MTH6N100 substitution
- MOSFET ⓘ Cross-Reference Search
MTH6N100 datasheet
Detailed specifications: IPB35CN10N, IPU33CN10N, IPB80CN10N, IPU78CN10N, MTH15N40, MTH20N15, MTH5N100, MTH5N95, AON7410, MTH6N100E, MTH6N55, MTH6N60, MTH8N35, MTH8N40, MTH8N55, MTH8N60, MTH8N90
Keywords - MTH6N100 MOSFET specs
MTH6N100 cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: CHM2305GP
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