MTH6N100E Datasheet and Replacement
Type Designator: MTH6N100E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 260 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO-218
MTH6N100E Datasheet (PDF)
Datasheet: IPU33CN10N , IPB80CN10N , IPU78CN10N , MTH15N40 , MTH20N15 , MTH5N100 , MTH5N95 , MTH6N100 , 4N60 , MTH6N55 , MTH6N60 , MTH8N35 , MTH8N40 , MTH8N55 , MTH8N60 , MTH8N90 , MTM10N100E .
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