MTH6N100E PDF and Equivalents Search

 

MTH6N100E Specs and Replacement


   Type Designator: MTH6N100E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO-218
 

 MTH6N100E substitution

   - MOSFET ⓘ Cross-Reference Search

 

MTH6N100E datasheet

 ..1. Size:617K  motorola
 mth6n100e.pdf pdf_icon

MTH6N100E

... See More ⇒

 6.1. Size:579K  motorola
 mth6n100.pdf pdf_icon

MTH6N100E

... See More ⇒

 9.1. Size:232K  motorola
 mth6n55 mth6n60 mtm6n60.pdf pdf_icon

MTH6N100E

... See More ⇒

 9.2. Size:390K  st
 mth6n60fi.pdf pdf_icon

MTH6N100E

... See More ⇒

SHOW MORE

Detailed specifications: IPU33CN10N , IPB80CN10N , IPU78CN10N , MTH15N40 , MTH20N15 , MTH5N100 , MTH5N95 , MTH6N100 , 12N60 , MTH6N55 , MTH6N60 , MTH8N35 , MTH8N40 , MTH8N55 , MTH8N60 , MTH8N90 , MTM10N100E .

History: KI3055DY | IXFH40N30 | TK16V60W5 | TK8P60W5 | STK2NA60 | RFD7N10LESM | AGM16N10C

Keywords - MTH6N100E MOSFET specs

 MTH6N100E cross reference
 MTH6N100E equivalent finder
 MTH6N100E pdf lookup
 MTH6N100E substitution
 MTH6N100E replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 
Back to Top

 


 
.