MTH6N55 PDF and Equivalents Search

 

MTH6N55 Specs and Replacement

Type Designator: MTH6N55

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-218

MTH6N55 substitution

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MTH6N55 datasheet

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Detailed specifications: IPB80CN10N, IPU78CN10N, MTH15N40, MTH20N15, MTH5N100, MTH5N95, MTH6N100, MTH6N100E, 5N65, MTH6N60, MTH8N35, MTH8N40, MTH8N55, MTH8N60, MTH8N90, MTM10N100E, MTM10N25

Keywords - MTH6N55 MOSFET specs

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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 

 

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