MTH8N35 Specs and Replacement
Type Designator: MTH8N35
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 350 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
Package: TO-218
MTH8N35 substitution
- MOSFET ⓘ Cross-Reference Search
MTH8N35 datasheet
Detailed specifications: MTH15N40, MTH20N15, MTH5N100, MTH5N95, MTH6N100, MTH6N100E, MTH6N55, MTH6N60, IRFB3607, MTH8N40, MTH8N55, MTH8N60, MTH8N90, MTM10N100E, MTM10N25, MTM12N10, MTM12P05
Keywords - MTH8N35 MOSFET specs
MTH8N35 cross reference
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MTH8N35 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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