MTH8N90 Specs and Replacement
Type Designator: MTH8N90
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 175 nS
Cossⓘ - Output Capacitance: 175 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
Package: TO-218
MTH8N90 substitution
- MOSFET ⓘ Cross-Reference Search
MTH8N90 datasheet
Detailed specifications: MTH6N100, MTH6N100E, MTH6N55, MTH6N60, MTH8N35, MTH8N40, MTH8N55, MTH8N60, NCEP15T14, MTM10N100E, MTM10N25, MTM12N10, MTM12P05, MTM12P06, MTM12P08, MTM12P10, MTM13123
Keywords - MTH8N90 MOSFET specs
MTH8N90 cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: AOL1426 | AGM20P30AP | AGM20T09LL
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