MTM10N25 Specs and Replacement
Type Designator: MTM10N25
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 250 nS
Cossⓘ - Output Capacitance: 600 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TO-204AA
MTM10N25 substitution
- MOSFET ⓘ Cross-Reference Search
MTM10N25 datasheet
Detailed specifications: MTH6N55, MTH6N60, MTH8N35, MTH8N40, MTH8N55, MTH8N60, MTH8N90, MTM10N100E, STP80NF70, MTM12N10, MTM12P05, MTM12P06, MTM12P08, MTM12P10, MTM13123, MTM13127, MTM13227
Keywords - MTM10N25 MOSFET specs
MTM10N25 cross reference
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