SML100J19 MOSFET. Datasheet pdf. Equivalent
Type Designator: SML100J19
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 450 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Id|ⓘ - Maximum Drain Current: 19 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 335 nC
Cossⓘ - Output Capacitance: 6600 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: SOT227
SML100J19 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SML100J19 Datasheet (PDF)
sml100j19 sml100j19f.pdf
SML100J19SOT227 Package Outline.Dimensions in mm (inches)11.8 (0.463)12.2 (0.480)31.5 (1.240)NCHANNEL31.7 (1.248)8.9 (0.350)7.8 (0.307)4.1 (0.161 )8.2 (0.322) W = 9.6 (0.378)Hex Nut M 44.3 (0.169 )ENHANCEMENT MODE(4 places)4.8 (0.187)H =4.9 (0.193)1 2(4 places) HIGH VOLTAGERPOWER MOSFETS4.0 (0.157) 0.75 (0.030)4.2 (0.165) 0.85 (0.033)4 3
sml100j22.pdf
SML100J22SOT227 Package Outline.Dimensions in mm (inches)11.8 (0.463)12.2 (0.480)31.5 (1.240)NCHANNEL31.7 (1.248)8.9 (0.350)7.8 (0.307)4.1 (0.161 )8.2 (0.322) W = 9.6 (0.378)Hex Nut M 44.3 (0.169 )ENHANCEMENT MODE(4 places)4.8 (0.187)H =4.9 (0.193)1 2(4 places) HIGH VOLTAGERPOWER MOSFETS4.0 (0.157) 0.75 (0.030)4.2 (0.165) 0.85 (0.033)4 3
sml100j34.pdf
SML100J34SOT227 Package Outline.Dimensions in mm (inches)11.8 (0.463)12.2 (0.480)31.5 (1.240)NCHANNEL31.7 (1.248)8.9 (0.350)7.8 (0.307)4.1 (0.161 )8.2 (0.322) W = 9.6 (0.378)Hex Nut M 44.3 (0.169 )ENHANCEMENT MODE(4 places)4.8 (0.187)H =4.9 (0.193)1 2(4 places) HIGH VOLTAGERPOWER MOSFETS4.0 (0.157) 0.75 (0.030)4.2 (0.165) 0.85 (0.033)4 3
sml100c4.pdf
SML100C4TO254 Package Outline.Dimensions in mm (inches)13.59 (0.535) 6.32 (0.249)NCHANNEL13.84 (0.545) 6.60 (0.260)3.53 (0.139) 1.02 (0.040)Dia.3.78 (0.149) 1.27 (0.050)ENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETS1 2 3VDSS 1000VID(cont) 3.6ARDS(on) 4.000.89 (0.035)1.14 (0.045)3.81 (0.150)3.81 (0.150) BSCBSC Faster SwitchingPin 1 Drain Pin 2
sml100m12msf.pdf
NORMALLY-OFF SILICON CARBIDE POWER JFET SML100M12MSF RDS(on)max of 0.150 High Temperature Operation Tj = 200C Low Gate Charge and Intrinsic Capacitance Positive Temperature Coefficient and Temperature Independent Switching Behaviour APPLICATIONS UPS SMPS Induction Heating Motor Drive ABSOLUTE MAXIMUM RATINGS (TC = 25C unless othe
sml100s13.pdf
SML100S13D3PAK Package Outline.Dimensions in mm (inches)NCHANNEL4.98 (0.196)5.08 (0.200)ENHANCEMENT MODE15.95 (0.628) 13.41 (0.528)1.47 (0.058) 16.05 (0.632) 13.51 (0.532)1.04 (0.041)1.57 (0.062)1.15 (0.045)HIGH VOLTAGE11.51 (0.453)POWER MOSFETS13.79 (0.543)11.61 (0.457)13.99 (0.551)0.46 (0.018)0.56 (0.022)1 2 33 plcs. 1.27 (0.050)1.40 (0.055)VDS
sml1001rhn sml901rhn sml901r1hn.pdf
SML1001RHNSML901RHN0TO258 Package Outline.4TH GENERATION MOSFETDimensions in mm (Inches)6.86 (0.270)6.09 (0.240)17.65 (0.695)17.39 (0.685)1.14 (0.707)NCHANNEL0.88 (0.035)ENHANCEMENT MODE4.19 (0.165) HIGH VOLTAGE3.94 (0.155)Dia.1 2 3POWER MOSFETSD5.08 (0.200) 3.56 (0.140)GBSC BSC1.65 (0.065)1.39 (0.055)STyp.Pin 1 Drain Pin 2 Sourc
sml100b13 sml100b13f.pdf
SML100B13TO247AD Package Outline.Dimensions in mm (inches)4.69 (0.185) 15.49 (0.610) NCHANNEL5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)ENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETS3.55 (0.140)3.81 (0.150)1 2 3 VDSS 1000V1.65 (0.065)2.13 (0.084)0.40 (0.016)ID(cont) 13A0.79 (0.031) 2.87 (0.113)3.12 (0.123)1.01 (0.040)1.40 (0.055) RDS(on) 0.8602.
sml100b11 sml100b11f.pdf
SML100B11TO247AD Package Outline.Dimensions in mm (inches)4.69 (0.185) 15.49 (0.610) NCHANNEL5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)ENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETS3.55 (0.140)3.81 (0.150)1 2 3 VDSS 1000V1.65 (0.065)2.13 (0.084)0.40 (0.016)ID(cont) 11A0.79 (0.031) 2.87 (0.113)3.12 (0.123)1.01 (0.040)1.40 (0.055) RDS(on) 1.0002.
sml1001r sml901r sml901r1an sml901r3an.pdf
SML1001R1AN 1000V 9.5A 1.10SML901R1AN 900V 9.5A 1.10SEMESML1001R3AN 1000V 8.5A 1.30SML901R3AN 900V 8.5A 1.30LABTO3 Package Outline.Dimensions in mm (Inches)POWER MOS IVNCHANNELENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETSMAXIMUM RATINGS (Tcase =25C unless otherwise stated)SMLParameter 901R1AN 1001R1AN 901R3AN 1001R3AN Unit900 1000 900 1000 VVDSS Drain S
sml100s11.pdf
SML100S11D3PAK Package Outline.Dimensions in mm (inches)NCHANNEL4.98 (0.196)5.08 (0.200)ENHANCEMENT MODE15.95 (0.628) 13.41 (0.528)1.47 (0.058) 16.05 (0.632) 13.51 (0.532)1.04 (0.041)1.57 (0.062)1.15 (0.045)HIGH VOLTAGE11.51 (0.453)POWER MOSFETS13.79 (0.543)11.61 (0.457)13.99 (0.551)0.46 (0.018)0.56 (0.022)1 2 33 plcs. 1.27 (0.050)1.40 (0.055)VDS
sml100a9.pdf
SML100A9TO3 Package Outline.Dimensions in mm (inches)NCHANNEL25.15 (0.99) ENHANCEMENT MODE6.35 (0.25)26.67 (1.05)9.15 (0.36)10.67 (0.42)HIGH VOLTAGE11.18 (0.44) 1.52 (0.06)3.43 (0.135)POWER MOSFETSVDSS 1000V1 2ID(cont) 9A3(case)RDS(on) 1.1003.84 (0.151)4.09 (0.161)7.92 (0.312)12.70 (0.50) Faster Switching Lower LeakagePin 1
sml100h11.pdf
SML100H11TO258 Package Outline.Dimensions in mm (inches)6.86 (0.270)NCHANNEL6.09 (0.240)17.65 (0.695)17.39 (0.685)1.14 (0.707)ENHANCEMENT MODE0.88 (0.035)HIGH VOLTAGEPOWER MOSFETS4.19 (0.165)3.94 (0.155)Dia.1 2 3VDSS 1000VID(cont) 11ARDS(on) 0.8805.08 (0.200) 3.56 (0.140)BSC BSC Faster Switching1.65 (0.065)1.39 (0.055) Lower
sml100l16.pdf
SML100L16TO264AA Package Outline.Dimensions in mm (inches)1.80 (0.071)2.01 (0.079) NCHANNEL4.60 (0.181) 19.51 (0.768)5.21 (0.205) 26.49 (0.807)3.10 (0.122)ENHANCEMENT MODE3.48 (0.137)HIGH VOLTAGEPOWER MOSFETSVDSS 1000V1 2 32.29 (0.090)ID(cont) 21A2.69 (0.106)2.79 (0.110)3.18 (0.125)RDS(on) 0.5000.48 (0.019) 0.76 (0.030)0.84 (0.033) 1.30 (0
sml1004r2gxn.pdf
SML1004R2GXNSEMELAB4TH GENERATION MOSFETTO257 Package Outline.Dimensions in mm (inches)4.83 (0.190) NCHANNEL5.08 (0.200)10.41 (0.410)10.67 (0.420)0.89 (0.035)ENHANCEMENT MODE1.14 (0.045)HIGH VOLTAGE3.56 (0.140)Dia.3.81 (0.150)ISOLATEDPOWER MOSFETS1 2 3VDSS 1000VID(cont) 3.0ARDS(on) 4.200.64 (0.025)Dia.0.89 (0.035)2.54 (0.100) 3.05 (0.120
sml100t21.pdf
SML100T21T247clip Package Outline.Dimensions in mm (inches)4.69 (0.185) 15.49 (0.610)NCHANNEL5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)ENHANCEMENT MODE5.38 (0.212)6.20 (0.244)HIGH VOLTAGEPOWER MOSFETS2VDSS 1000V1 2 32.87 (0.113)ID(cont) 21A0.40 (0.016)3.12 (0.123) 0.79 (0.031)1.65 (0.065)2.13 (0.084) RDS(on) 0.5001.01 (0.040)1.40 (0.0
sml100w18.pdf
SML100W18TO267 Package Outline.Dimensions in mm (inches)NCHANNELENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETSVDSS 1000VID(cont) 17.3ARDS(on) 0.570 Faster Switching Lower Leakage TO267 Hermetic PackageDStarMOS is a new generation of high voltageNChannel enhancement mode power MOSFETs.This new technology minimises the JFET effect,Gincre
sml100h9.pdf
SML100H9TO258 Package Outline.Dimensions in mm (inches)6.86 (0.270)NCHANNEL6.09 (0.240)17.65 (0.695)17.39 (0.685)1.14 (0.707)ENHANCEMENT MODE0.88 (0.035)HIGH VOLTAGEPOWER MOSFETS4.19 (0.165)3.94 (0.155)Dia.1 2 3VDSS 1000VID(cont) 9ARDS(on) 1.1005.08 (0.200) 3.56 (0.140)BSC BSC Faster Switching1.65 (0.065)1.39 (0.055) Lower Le
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
