MTM4N50 Specs and Replacement
Type Designator: MTM4N50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO-204AA
MTM4N50 substitution
- MOSFET ⓘ Cross-Reference Search
MTM4N50 datasheet
Detailed specifications: MTM2N50, MTM2N85, MTM2N90, MTM30N50, MTM3N60, MTM40N20, MTM45N15, MTM4N45, AON7403, MTM55N08, MTM55N10, MTM5N100, MTM5N35, MTM5N40, MTM5N95, MTM60N05, MTM60N06
Keywords - MTM4N50 MOSFET specs
MTM4N50 cross reference
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MTM4N50 substitution
MTM4N50 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: 2SK1007 | FQNL2N50B | HM4616 | BUK654R6-55C
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