MTM60N06 Specs and Replacement
Type Designator: MTM60N06
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 350 nS
Cossⓘ - Output Capacitance: 2500 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: TO-204AE
MTM60N06 substitution
- MOSFET ⓘ Cross-Reference Search
MTM60N06 datasheet
Detailed specifications: MTM4N50, MTM55N08, MTM55N10, MTM5N100, MTM5N35, MTM5N40, MTM5N95, MTM60N05, IRFP064N, MTM68410, MTM68411, MTM6N60, MTM6N90, MTM76110, MTM76111, MTM76123, MTM76320
Keywords - MTM60N06 MOSFET specs
MTM60N06 cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: TPC8122 | MSAFR30N20A
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