MTM8N60 Specs and Replacement
Type Designator: MTM8N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 160 nS
Cossⓘ - Output Capacitance: 425 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO-204AA
MTM8N60 substitution
- MOSFET ⓘ Cross-Reference Search
MTM8N60 datasheet
Detailed specifications: MTM7N50, MTM86124, MTM86127, MTM86128, MTM86227, MTM8N20, MTM8N35, MTM8N40, AON6414A, MTM98140, MTM981400BBF, MTM98240, MTM982400BBF, MTMC8E2A, MTN12N30FP, MTN12N60BFP, MTN1N60L3
Keywords - MTM8N60 MOSFET specs
MTM8N60 cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IMZA65R072M1H | TPC6201
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