MTM981400BBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: MTM981400BBF
Marking Code: BA
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 15
nS
Cossⓘ -
Output Capacitance: 190
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025
Ohm
Package:
SO-8
MTM981400BBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTM981400BBF
Datasheet (PDF)
..1. Size:522K panasonic
mtm981400bbf.pdf
Doc No. TT4-EA-10096Revision. 3MOS FETMTM981400BBFMTM981400BBFPMOS FETUnit: mm 5.00.4 0.228 7 6 5 :RDS(on) typ. = 28 m (VGS = -4.5 V) (EU RoHS / UL-94 V-0 / MSL:Level 1 )1 2 3
6.1. Size:375K panasonic
mtm98140.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).MTM98140Silicon P-channel MOS FETFor DC-DC converter circuitsFor LCD back light inverter Overview PackageThe MTM98140 is suitable for DC-DC converter and LCD back light Codeinverter. SO8-F1-B Pin Name Features 1: Source 5: Drain Low drain-source ON resistance: RDS(on) typ. = 19 mW (VGS
9.1. Size:363K panasonic
mtm982400bbf.pdf
Doc No. TT4-EA-10241Revision. 2Product StandardsMOS FETMTM982400BBFMTM982400BBFSilicon N-channel MOSFETUnit: mm 5.0For switching0.4 0.228 7 6 5 Features Low drain-source On-state Resistance RDS(on) typ = 29 m (VGS = 5.0 V) Halogen-free / RoHS compliant1 2 3 4 (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)0.951.27 Marking Symbol: CA1. Sour
9.2. Size:264K panasonic
mtm98240.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).Silicon MOS FETs (Small Signal) MTM98240Silicon N-channel MOS FETFor DC-DC converter circuitsFor LCD back light inverter Overview PackageThe MTM98240 is suitable for DC-DC converter and LCD back light Codeinverter, which features the industry's top-class low on-resistance and SO8-F1-Bswitching char
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