MTP10N40E
MOSFET. Datasheet pdf. Equivalent
Type Designator: MTP10N40E
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 46
nC
trⓘ - Rise Time: 37
nS
Cossⓘ -
Output Capacitance: 230
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.55
Ohm
Package:
TO-220AB
MTP10N40E
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTP10N40E
Datasheet (PDF)
..1. Size:151K motorola
mtp10n40e.pdf 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP10N40E/DDesigner's Data SheetMTP10N40ETMOS E-FET.High Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced high voltage TMOS EFET is designed to10 AMPERESwithstand high energy in the avalanche mode and switch efficiently.400 VOLTSThis new high energy device also of
0.1. Size:249K motorola
mtp10n40erev0x.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP10N40E/DDesigner's Data SheetMTP10N40ETMOS E-FET.High Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced high voltage TMOS EFET is designed to10 AMPERESwithstand high energy in the avalanche mode and switch efficiently.400 VOLTSThis new high energy device also of
8.1. Size:221K motorola
mtp10n10el.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP10N10EL/DDesigner's Data SheetMTP10N10ELLogic Level TMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS power FET is designed to withstand high10 AMPERESenergy in the avalanche and commutation modes. This new energy
8.3. Size:237K motorola
mtp10n10erev0x.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP10N10E/DDesigner's Data SheetMTP10N10ETMOS IVPower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETsThis advanced E series of TMOS power MOSFETs is designed10 AMPERESto withstand high energy in the avalanche and commutation100 VOLTSmodes. These new energy efficient d
8.4. Size:203K motorola
mtp10n10e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP10N10E/DDesigner's Data SheetMTP10N10ETMOS IVPower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETsThis advanced E series of TMOS power MOSFETs is designed10 AMPERESto withstand high energy in the avalanche and commutation100 VOLTSmodes. These new energy efficient d
8.7. Size:102K onsemi
mtp10n10el mtp10n10elg.pdf
MTP10N10ELPreferred DevicePower MOSFET10 A, 100 V, Logic Level, N-Channel TO-220This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsooffers a drain-to-source diode with a fast recovery time. Designed forlow voltage, high speed switching applications in power supplies,http://onsemi.comconverters and PWM mo
8.8. Size:108K onsemi
mtp10n10e.pdf
MTP10N10EPreferred DevicePower MOSFET10 Amps, 100 VoltsNChannel TO220This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsohttp://onsemi.comoffers draintosource diodes with fast recovery times. Designed forlow voltage, high speed switching applications in power supplies,10 AMPERESconverters
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