All MOSFET. MTP12P06 Datasheet

 

MTP12P06 Datasheet and Replacement


   Type Designator: MTP12P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 575 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO-220AB
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MTP12P06 Datasheet (PDF)

 ..1. Size:90K  njs
 mtm12p05 mtm12p06 mtm12p08 mtm12p10 mtp12p05 mtp12p06 mtp12p08 mtp12p10.pdf pdf_icon

MTP12P06

 8.1. Size:164K  motorola
 mtp12p10.pdf pdf_icon

MTP12P06

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP12P10/DDesigner's Data SheetMTP12P10Power Field Effect TransistorPChannel EnhancementMode Silicon GateThis TMOS Power FET is designed for medium voltage, highTMOS POWER FETspeed power switching applications such as switching regulators,12 AMPERESconverters, solenoid and relay drivers.100 VOLTS S

 8.2. Size:190K  motorola
 mtp12p10rev1a.pdf pdf_icon

MTP12P06

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP12P10/DDesigner's Data SheetMTP12P10Power Field Effect TransistorPChannel EnhancementMode Silicon GateThis TMOS Power FET is designed for medium voltage, highTMOS POWER FETspeed power switching applications such as switching regulators,12 AMPERESconverters, solenoid and relay drivers.100 VOLTS S

 8.3. Size:72K  onsemi
 mtp12p10-d mtp12p10g.pdf pdf_icon

MTP12P06

MTP12P10Preferred DevicePower MOSFET12 Amps, 100 VoltsP-Channel TO-220This Power MOSFET is designed for medium voltage, high speedhttp://onsemi.compower switching applications such as switching regulators, converters,solenoid and relay drivers.12 AMPERES, 100 VOLTSFeaturesRDS(on) = 300 mW Silicon Gate for Fast Switching Speeds - Switching Times SpecifiedP-Channela

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