MTP1N80E PDF and Equivalents Search

 

MTP1N80E Specs and Replacement

Type Designator: MTP1N80E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 29 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm

Package: TO-220AB

MTP1N80E substitution

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MTP1N80E datasheet

 ..1. Size:141K  motorola
 mtp1n80e.pdf pdf_icon

MTP1N80E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP1N80E/D Designer's Data Sheet MTP1N80E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 1.0 AMPERES scheme to provide enhanced voltage blocking capability without 800 VOLTS degra... See More ⇒

 0.1. Size:221K  motorola
 mtp1n80erev0ax.pdf pdf_icon

MTP1N80E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP1N80E/D Designer's Data Sheet MTP1N80E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 1.0 AMPERES scheme to provide enhanced voltage blocking capability without 800 VOLTS degra... See More ⇒

 9.1. Size:159K  motorola
 mtp1n50erev1x.pdf pdf_icon

MTP1N80E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP1N50E/D Designer's Data Sheet MTP1N50E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 1.0 AMPERES scheme to provide enhanced voltage blocking capability without 500 VOLTS degra... See More ⇒

 9.2. Size:232K  motorola
 mtp1n60erev1x.pdf pdf_icon

MTP1N80E

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP1N60E/D Designer's Data Sheet MTP1N60E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 1.0 AMPERES scheme to provide enhanced voltage blocking capability without 600 VOLTS degra... See More ⇒

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Detailed specifications: MTP15N05E, MTP15N06, MTP1N100, MTP1N50, MTP1N50E, MTP1N55, MTP1N60, MTP1N60E, 5N60, MTP1N95, MTP20N10E, MTP20N15EG, MTP20N20E, MTP20P06, MTP23P06V, MTP23P06VG, MTP25N05E

Keywords - MTP1N80E MOSFET specs

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