All MOSFET. MTP1N80E Datasheet

 

MTP1N80E Datasheet and Replacement


   Type Designator: MTP1N80E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
   Package: TO-220AB
 

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MTP1N80E Datasheet (PDF)

 ..1. Size:141K  motorola
 mtp1n80e.pdf pdf_icon

MTP1N80E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP1N80E/DDesigner's Data SheetMTP1N80ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination1.0 AMPERESscheme to provide enhanced voltageblocking capability without800 VOLTSdegra

 0.1. Size:221K  motorola
 mtp1n80erev0ax.pdf pdf_icon

MTP1N80E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP1N80E/DDesigner's Data SheetMTP1N80ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination1.0 AMPERESscheme to provide enhanced voltageblocking capability without800 VOLTSdegra

 9.1. Size:159K  motorola
 mtp1n50erev1x.pdf pdf_icon

MTP1N80E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP1N50E/DDesigner's Data SheetMTP1N50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination1.0 AMPERESscheme to provide enhanced voltageblocking capability without500 VOLTSdegra

 9.2. Size:232K  motorola
 mtp1n60erev1x.pdf pdf_icon

MTP1N80E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP1N60E/DDesigner's Data SheetMTP1N60ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination1.0 AMPERESscheme to provide enhanced voltageblocking capability without600 VOLTSdegra

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Datasheet: MTP15N05E , MTP15N06 , MTP1N100 , MTP1N50 , MTP1N50E , MTP1N55 , MTP1N60 , MTP1N60E , 5N60 , MTP1N95 , MTP20N10E , MTP20N15EG , MTP20N20E , MTP20P06 , MTP23P06V , MTP23P06VG , MTP25N05E .

Keywords - MTP1N80E MOSFET datasheet

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