MTP2N35 Specs and Replacement
Type Designator: MTP2N35
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 50 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO-220AB
MTP2N35 substitution
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MTP2N35 datasheet
mtp2n40erev0bx.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP2N40E/D Designer's Data Sheet MTP2N40E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 2.0 AMPERES scheme to provide enhanced voltage blocking capability without 400 VOLTS degra... See More ⇒
mtp2n50e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP2N50E/D Designer's Data Sheet MTP2N50E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 2.0 AMPERES scheme to provide enhanced voltage blocking capability without 500 VOLTS degra... See More ⇒
Detailed specifications: MTP20P06, MTP23P06V, MTP23P06VG, MTP25N05E, MTP2955, MTP2955V, MTP2N18, MTP2N20, 75N75, MTP2N40, MTP2N40E, MTP2N45, MTP2N50E, MTP2N55, MTP2N60, MTP2N60E, MTP2N80
Keywords - MTP2N35 MOSFET specs
MTP2N35 cross reference
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MTP2N35 substitution
MTP2N35 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: MTP2N18 | AS2003M | 2N65KL-TND-R | MEM2307XG | H05N60F | ME35N10-G | AGM40P100A
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