All MOSFET. MTP2N35 Datasheet

 

MTP2N35 Datasheet and Replacement


   Type Designator: MTP2N35
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 350 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 1.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 7.5 nC
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO-220AB
 

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MTP2N35 Datasheet (PDF)

 ..1. Size:786K  njs
 mtp2n35 mtp2n40.pdf pdf_icon

MTP2N35

 9.1. Size:107K  1
 irf610 irf611 irf612 irf613 mtp2n18 mtp2n20.pdf pdf_icon

MTP2N35

 9.2. Size:217K  motorola
 mtp2n40erev0bx.pdf pdf_icon

MTP2N35

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2N40E/DDesigner's Data SheetMTP2N40ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without400 VOLTSdegra

 9.3. Size:244K  motorola
 mtp2n50e.pdf pdf_icon

MTP2N35

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2N50E/DDesigner's Data SheetMTP2N50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without500 VOLTSdegra

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Datasheet: MTP20P06 , MTP23P06V , MTP23P06VG , MTP25N05E , MTP2955 , MTP2955V , MTP2N18 , MTP2N20 , IRF520 , MTP2N40 , MTP2N40E , MTP2N45 , MTP2N50E , MTP2N55 , MTP2N60 , MTP2N60E , MTP2N80 .

History: APT50M50JLC

Keywords - MTP2N35 MOSFET datasheet

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