MTP3N40 Specs and Replacement
Type Designator: MTP3N40
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ -
Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.3 Ohm
Package: TO-220AB
- MOSFET ⓘ Cross-Reference Search
MTP3N40 datasheet
9.1. Size:179K motorola
mtp3n100e.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N100E/D Designer's Data Sheet MTP3N100E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 3.0 AMPERES scheme to provide enhanced voltage blocking capability without 1000 VOLTS de... See More ⇒
9.2. Size:215K motorola
mtp3n50e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N50E/D Designer's Data Sheet MTP3N50E TMOS E-FET. Motorola Preferred Device High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 3.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 500 VOLTS This new ... See More ⇒
9.3. Size:181K motorola
mtp3n25e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N25E/D Designer's Data Sheet MTP3N25E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 3.0 AMPERES energy in the avalanche and commutation modes. The new energy 250 VOLTS effic... See More ⇒
9.5. Size:188K motorola
mtp3n60e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N60E/D Designer's Data Sheet MTP3N60E TMOS E-FET. Motorola Preferred Device High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 3.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 600 VOLTS This new ... See More ⇒
9.6. Size:217K motorola
mtp3n120e.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N120E/D Designer's Data Sheet MTP3N120E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 3.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 1200 VOLTS ... See More ⇒
9.7. Size:251K motorola
mtp3n50erev1a.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N50E/D Designer's Data Sheet MTP3N50E TMOS E-FET. Motorola Preferred Device High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 3.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 500 VOLTS This new ... See More ⇒
9.8. Size:208K motorola
mtp3n25erev2.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N25E/D Designer's Data Sheet MTP3N25E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 3.0 AMPERES energy in the avalanche and commutation modes. The new energy 250 VOLTS effic... See More ⇒
9.9. Size:183K motorola
mtp3n60erev2.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N60E/D Designer's Data Sheet MTP3N60E TMOS E-FET. Motorola Preferred Device High Energy Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 3.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 600 VOLTS This new ... See More ⇒
9.11. Size:252K motorola
mtp3n120e-.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N120E/D Designer's Data Sheet MTP3N120E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 3.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 1200 VOLTS ... See More ⇒
9.12. Size:206K motorola
mtp3n100e-.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N100E/D Designer's Data Sheet MTP3N100E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 3.0 AMPERES scheme to provide enhanced voltage blocking capability without 1000 VOLTS de... See More ⇒
9.13. Size:200K st
mtp3n60.pdf
MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D MTP3N60 600 V ... See More ⇒
9.15. Size:176K onsemi
mtp3n120e.pdf
MTP3N120E Designer s Data Sheet TMOS E-FET. Power Field Effect Transistor N-Channel Enhancement-Mode Silicon http //onsemi.com Gate This advanced high-voltage TMOS E-FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast TO-220AB recovery time. Designed for high voltage, hi... See More ⇒
9.16. Size:27K no
mtp3n55.pdf
PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE MTP3N55 PH (561) 283-4500 FAX (561) 286-8914 Website http //www.semi-tech-inc.com CASE OUTLINE TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING Drain Source Voltage VDSS 550 Vdc Drain Gate Voltage VDGR 550 Vdc Drain Current Continuous ID 3... See More ⇒
9.17. Size:204K inchange semiconductor
mtp3n50e.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor MTP3N50E FEATURES With TO-220 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS PFC stages Popular AC-DC applications Power supply Switching applications ABS... See More ⇒
Detailed specifications: MTP2P50, MTP2P50EG, MTP3055V, MTP30P06V, MTP36N06V, MTP3N100, MTP3N120E, MTP3N35, IRFP064N, MTP3N55, MTP3N75, MTP3N80, MTP3N95, MTP3P25, MTP4N08, MTP4N10, MTP4N40E
Keywords - MTP3N40 MOSFET specs
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