All MOSFET. MTP8N50E Datasheet

 

MTP8N50E MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTP8N50E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 40 nC
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO-220AB

 MTP8N50E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTP8N50E Datasheet (PDF)

 ..1. Size:119K  motorola
 mtp8n50e.pdf

MTP8N50E MTP8N50E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP8N50E/DDesigner's Data SheetMTP8N50ETMOS E-FET.Power Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination8.0 AMPERESscheme to provide enhanced voltageblocking capability without500 VOLTSdegrading performance over time.

 0.1. Size:158K  motorola
 mtp8n50erev2x.pdf

MTP8N50E MTP8N50E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP8N50E/DDesigner's Data SheetMTP8N50ETMOS E-FET.Power Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination8.0 AMPERESscheme to provide enhanced voltageblocking capability without500 VOLTSdegrading performance over time.

 9.1. Size:212K  motorola
 mtp8n06erev1.pdf

MTP8N50E MTP8N50E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP8N06E/DDesigner's Data SheetMTP8N06ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high8.0 AMPERESenergy in the avalanche and commutation modes. The new energy60 VOLTSeffici

 9.2. Size:185K  motorola
 mtp8n06e.pdf

MTP8N50E MTP8N50E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP8N06E/DDesigner's Data SheetMTP8N06ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high8.0 AMPERESenergy in the avalanche and commutation modes. The new energy60 VOLTSeffici

 9.3. Size:95K  njs
 mtm8n20 mtp8n20.pdf

MTP8N50E MTP8N50E

 9.4. Size:58K  njs
 mtp8n60.pdf

MTP8N50E MTP8N50E

 9.5. Size:932K  cn vbsemi
 mtp8n06.pdf

MTP8N50E MTP8N50E

MTP8N06www.VBsemi.twN-Channel 60 V(D-S) MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt ratingVDS (V) 60 Fast switchingRDS(on) ()VGS = 10 V 0.072 Ease of parallelingQg max. (nC) 25Simple drive requirementsQgs (nC) 5.8Qgd (nC) 11Configuration SingleDTO-220ABGSDGSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)P

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IXFP10N60P

 

 
Back to Top