MTP8N50E MOSFET Datasheet: N-Ch, 500V, 8A. Full specification with pinout and replacement list

MTP8N50E Specs and Replacement

Type Designator: MTP8N50E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO-220AB

MTP8N50E substitution

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MTP8N50E datasheet

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP8N50E/D Designer's Data Sheet MTP8N50E TMOS E-FET. Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 8.0 AMPERES scheme to provide enhanced voltage blocking capability without 500 VOLTS degrading performance over time.... See More ⇒

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP8N06E/D Designer's Data Sheet MTP8N06E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced TMOS E FET is designed to withstand high 8.0 AMPERES energy in the avalanche and commutation modes. The new energy 60 VOLTS effici... See More ⇒

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