MTW4N80E PDF and Equivalents Search

 

MTW4N80E Specs and Replacement

Type Designator: MTW4N80E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO-247AE

MTW4N80E substitution

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MTW4N80E datasheet

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MTW4N80E

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Detailed specifications: MTW23N25E, MTW24N40E, MTW26N15E, MTW32N20EG, MTW32N25E, MTW33N10E, MTW35N15E, MTW45N10E, AON6380, MTW6N60E, MTW7N80E, MTW8N50E, MTY100N10E, MVB50P03HDL, MVB50P03HDLT4G, MVGSF1N02L, MVGSF1N02LT1G

Keywords - MTW4N80E MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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