MVGSF1N02LT1G MOSFET Datasheet: N-Ch, 20V, 0.75A. Full specification with pinout and replacement list

MVGSF1N02LT1G Specs and Replacement

Type Designator: MVGSF1N02LT1G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: SOT-23

MVGSF1N02LT1G substitution

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MVGSF1N02LT1G datasheet

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MGSF1N03L, MVGSF1N03L Power MOSFET 30 V, 2.1 A, Single N-Channel, SOT-23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical http //onsemi.com http //onsemi.com applications are dc-dc converters and power management in portable and battery-powered produ... See More ⇒