2SK616 Specs and Replacement
Type Designator: 2SK616
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO3P
2SK616 substitution
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2SK616 datasheet
2sk616.pdf
isc N-Channel MOSFET Transistor 2SK616 FEATURES Drain Current I =22A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS... See More ⇒
2sk615.pdf
Silicon MOS FETs (Small Signal) 2SK615 2SK615 Silicon N-Channel MOS Unit mm For switching 6.9 0.1 2.5 0.1 1.5 Features 1.5 R0.9 1.0 R0.9 Low ON-resistance RDS(on) High-speed switching Direct drive possible with CMOS, TTL Easy automatic- /manual-insertion due to M type package. Self-fix- 0.85 ing to printed circuits board. 0.55 0.1 0.45 0.05 3 2 1 Absolute Maximu... See More ⇒
Detailed specifications: 2SK400, 2SK429, 2SK562, 2SK564, 2SK566, 2SK602, 2SK604, 2SK610, RU7088R, 2SK617, 2SK622, 2SK627, 2SK629, 2SK630, 2SK631, 2SK632, 2SK633
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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