2SK634 PDF and Equivalents Search

 

2SK634 PDF Specs and Replacement


   Type Designator: 2SK634
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: TO3P
 

 2SK634 substitution

   - MOSFET ⓘ Cross-Reference Search

 

2SK634 PDF Specs

 ..1. Size:242K  inchange semiconductor
2sk634.pdf pdf_icon

2SK634

isc N-Channel MOSFET Transistor 2SK634 FEATURES Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay d... See More ⇒

 9.1. Size:242K  inchange semiconductor
2sk632.pdf pdf_icon

2SK634

isc N-Channel MOSFET Transistor 2SK632 FEATURES Drain Current I =5A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay dr... See More ⇒

 9.2. Size:242K  inchange semiconductor
2sk630.pdf pdf_icon

2SK634

isc N-Channel MOSFET Transistor 2SK630 FEATURES Drain Current I =5A@ T =25 D C Drain Source Voltage- V = 160V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay dri... See More ⇒

 9.3. Size:241K  inchange semiconductor
2sk631.pdf pdf_icon

2SK634

isc N-Channel MOSFET Transistor 2SK631 FEATURES Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 160V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay d... See More ⇒

Detailed specifications: 2SK617 , 2SK622 , 2SK627 , 2SK629 , 2SK630 , 2SK631 , 2SK632 , 2SK633 , IRF3205 , 2SK635 , 2SK636 , 2SK637 , 2SK638 , 2SK667 , 2SK745 , 2SK746 , 2SK749 .

History: PJU4NA60

Keywords - 2SK634 MOSFET specs

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