All MOSFET. 2SK635 Datasheet

 

2SK635 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK635
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
   Package: TO3P

 2SK635 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK635 Datasheet (PDF)

 ..1. Size:242K  inchange semiconductor
 2sk635.pdf

2SK635 2SK635

isc N-Channel MOSFET Transistor 2SK635FEATURESDrain Current I =3A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay dr

 9.1. Size:242K  inchange semiconductor
 2sk632.pdf

2SK635 2SK635

isc N-Channel MOSFET Transistor 2SK632FEATURESDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay dr

 9.2. Size:242K  inchange semiconductor
 2sk630.pdf

2SK635 2SK635

isc N-Channel MOSFET Transistor 2SK630FEATURESDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 160V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for low voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay dri

 9.3. Size:241K  inchange semiconductor
 2sk631.pdf

2SK635 2SK635

isc N-Channel MOSFET Transistor 2SK631FEATURESDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 160V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay d

 9.4. Size:242K  inchange semiconductor
 2sk634.pdf

2SK635 2SK635

isc N-Channel MOSFET Transistor 2SK634FEATURESDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay d

 9.5. Size:242K  inchange semiconductor
 2sk637.pdf

2SK635 2SK635

isc N-Channel MOSFET Transistor 2SK637FEATURESDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay d

 9.6. Size:237K  inchange semiconductor
 2sk638.pdf

2SK635 2SK635

isc N-Channel MOSFET Transistor 2SK638FEATURESDrain Current I =3A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay dr

 9.7. Size:242K  inchange semiconductor
 2sk636.pdf

2SK635 2SK635

isc N-Channel MOSFET Transistor 2SK636FEATURESDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay dr

 9.8. Size:241K  inchange semiconductor
 2sk633.pdf

2SK635 2SK635

isc N-Channel MOSFET Transistor 2SK633FEATURESDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operatioDESCRIPTIONDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay dr

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top