All MOSFET. 2SK753 Datasheet

 

2SK753 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK753
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 160 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO220F

 2SK753 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK753 Datasheet (PDF)

 ..1. Size:233K  inchange semiconductor
 2sk753.pdf

2SK753 2SK753

isc N-Channel MOSFET Transistor 2SK753DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 160V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 160

 9.1. Size:33K  panasonic
 2sk758.pdf

2SK753 2SK753

Power F-MOS FETs 2SK7582SK758Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2Low ON-resistance RDS(on) : RDS(on) = 0.45(typ) 5.5 0.2 2.7 0.2High-speed switching : tf = 45ns(typ)No secondary breakdown3.1 0.1 ApplicationsDC-DC converter1.3 0.2 1.4 0.1Non-contact relaySolenoid drive+0.20.5 -0.10.8 0.1Motor drive2.54 0.25

 9.2. Size:232K  inchange semiconductor
 2sk757.pdf

2SK753 2SK753

isc N-Channel MOSFET Transistor 2SK757DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 20

 9.3. Size:232K  inchange semiconductor
 2sk754.pdf

2SK753 2SK753

isc N-Channel MOSFET Transistor 2SK754DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 160V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 16

 9.4. Size:240K  inchange semiconductor
 2sk751.pdf

2SK753 2SK753

isc N-Channel MOSFET Transistor 2SK751DESCRIPTIONDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 1

 9.5. Size:235K  inchange semiconductor
 2sk750.pdf

2SK753 2SK753

isc N-Channel MOSFET Transistor 2SK750DESCRIPTIONDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 1

 9.6. Size:234K  inchange semiconductor
 2sk758.pdf

2SK753 2SK753

isc N-Channel MOSFET Transistor 2SK758DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingapplications such as switching regulators, converters,solenoid and relay d

 9.7. Size:234K  inchange semiconductor
 2sk759.pdf

2SK753 2SK753

isc N-Channel MOSFET Transistor 2SK759DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingapplications such as switching regulators, converters,solenoid and relay d

 9.8. Size:233K  inchange semiconductor
 2sk752.pdf

2SK753 2SK753

isc N-Channel MOSFET Transistor 2SK752DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 160V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switching applicationssuch as switching regulators, converters,relay drivers.ABSOLUTE MAXIMUM RATINGS(T =2

 9.9. Size:234K  inchange semiconductor
 2sk756.pdf

2SK753 2SK753

isc N-Channel MOSFET Transistor 2SK756DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXIMU

 9.10. Size:233K  inchange semiconductor
 2sk755.pdf

2SK753 2SK753

isc N-Channel MOSFET Transistor 2SK755DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =200V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 200

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRF9Z34NSPBF

 

 
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