2SK763 PDF and Equivalents Search

 ..1. Size:235K  inchange semiconductor
 2sk763.pdf

isc N-Channel MOSFET Transistor 2SK763 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conver... See More ⇒

 9.1. Size:145K  panasonic
 2sk765-a.pdf

"2SK765" "2SK765" ... See More ⇒

 9.2. Size:64K  panasonic
 2sk764 2sk764a.pdf

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 9.3. Size:68K  panasonic
 2sk762 2sk762a.pdf

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 9.4. Size:237K  inchange semiconductor
 2sk768.pdf

isc N-Channel MOSFET Transistor 2SK768 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conve... See More ⇒

 9.5. Size:234K  inchange semiconductor
 2sk767.pdf

isc N-Channel MOSFET Transistor 2SK767 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conver... See More ⇒

 9.6. Size:234K  inchange semiconductor
 2sk769.pdf

isc N-Channel MOSFET Transistor 2SK769 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conve... See More ⇒

 9.7. Size:237K  inchange semiconductor
 2sk764a.pdf

isc N-Channel MOSFET Transistor 2SK764A DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conv... See More ⇒

 9.8. Size:234K  inchange semiconductor
 2sk762.pdf

isc N-Channel MOSFET Transistor 2SK762 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conver... See More ⇒

 9.9. Size:234K  inchange semiconductor
 2sk766.pdf

isc N-Channel MOSFET Transistor 2SK766 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conver... See More ⇒

 9.10. Size:235K  inchange semiconductor
 2sk765.pdf

isc N-Channel MOSFET Transistor 2SK765 DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conv... See More ⇒

 9.11. Size:242K  inchange semiconductor
 2sk765a.pdf

isc N-Channel MOSFET Transistor 2SK765A DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, con... See More ⇒

 9.12. Size:237K  inchange semiconductor
 2sk764.pdf

isc N-Channel MOSFET Transistor 2SK764 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, conve... See More ⇒