All MOSFET. 2SK766 Datasheet

 

2SK766 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK766

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 3 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 3.6 Ohm

Package: TO220F

2SK766 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK766 Datasheet (PDF)

1.1. 2sk766.pdf Size:234K _update-mosfet

2SK766
2SK766

isc N-Channel MOSFET Transistor 2SK766 DESCRIPTION ·Drain Current –I =3A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, conver

5.1. 2sk765-a.pdf Size:145K _update

2SK766
2SK766

查询"2SK765"供应商 查询"2SK765"供应商

5.2. 2sk769.pdf Size:62K _update

2SK766



 5.3. 2sk762 2sk762a.pdf Size:68K _update

2SK766



5.4. 2sk768.pdf Size:62K _update

2SK766
2SK766

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK768 DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RA

 5.5. 2sk764 2sk764a.pdf Size:64K _update

2SK766



5.6. 2sk767.pdf Size:234K _update-mosfet

2SK766
2SK766

isc N-Channel MOSFET Transistor 2SK767 DESCRIPTION ·Drain Current –I =5A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, conver

5.7. 2sk765a.pdf Size:242K _update-mosfet

2SK766
2SK766

isc N-Channel MOSFET Transistor 2SK765A DESCRIPTION ·Drain Current –I = 10A@ T =25℃ D C ·Drain Source Voltage- : V = 450V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, con

5.8. 2sk762.pdf Size:234K _update-mosfet

2SK766
2SK766

isc N-Channel MOSFET Transistor 2SK762 DESCRIPTION ·Drain Current –I =3A@ T =25℃ D C ·Drain Source Voltage- : V = 400V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, conver

5.9. 2sk769.pdf Size:234K _update-mosfet

2SK766
2SK766

isc N-Channel MOSFET Transistor 2SK769 DESCRIPTION ·Drain Current –I =10A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, conve

5.10. 2sk764a.pdf Size:237K _update-mosfet

2SK766
2SK766

isc N-Channel MOSFET Transistor 2SK764A DESCRIPTION ·Drain Current –I =10A@ T =25℃ D C ·Drain Source Voltage- : V = 450V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, conv

5.11. 2sk763.pdf Size:235K _update-mosfet

2SK766
2SK766

isc N-Channel MOSFET Transistor 2SK763 DESCRIPTION ·Drain Current –I =5A@ T =25℃ D C ·Drain Source Voltage- : V = 400V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, conver

5.12. 2sk764.pdf Size:237K _update-mosfet

2SK766
2SK766

isc N-Channel MOSFET Transistor 2SK764 DESCRIPTION ·Drain Current –I =10A@ T =25℃ D C ·Drain Source Voltage- : V = 400V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, conve

5.13. 2sk768.pdf Size:237K _update-mosfet

2SK766
2SK766

isc N-Channel MOSFET Transistor 2SK768 DESCRIPTION ·Drain Current –I =10A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, conve

5.14. 2sk765.pdf Size:235K _update-mosfet

2SK766
2SK766

isc N-Channel MOSFET Transistor 2SK765 DESCRIPTION ·Drain Current –I = 10A@ T =25℃ D C ·Drain Source Voltage- : V = 400V(Min) DSS ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, conv

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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